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(The problem statement is a bit artificial this is an inevitable consequence of trying to keep the problem simple. If this concerns you, think in terms of a Java class Funnylnteger that provides the methods described, but no others. Alternatively, the following scenario might put your mind at rest. Suppose k is stored as a binary numeral, and suppose the operation rot.k rotates the bits one place so that the rightmost bit becomes the leftmost bit. Then, this implements division by two, provided that the number is even. The operation even.fe simply converts the rightmost bit to a boolean value. That is, if the rightmost bit of the binary representation of k is 0, even.fc is true, and if it is 1, even.fc is false.) At some stage, the program must compute rot.k for some k. This operation computes k+2 reliably only when k is even (see (10.13)). The input value M is not necessarily even. So, it is reasonable to seek a program that ensures that m gets an even value and then assigns rot.m to m. That is, we use the rule of sequential composition to replace the original problem by the problem of determining a statement S and an intermediate assertion P satisfying even.ra A P }

Fig. 3.28 displays the effect of the inclusion of non-parabolicity on the groundstate energy of a single GaAs quantum well surrounded by Ga1_xAlxAs barriers. This figure plots AE, i.e. the energy calculated including non-parabolicity minus the energy which does not include non-parabolicity. Clearly, non-parabolicity increases the energy calculated, and the increase is (generally) larger for an increasing barrier height and a decreasing well width. The latter two points reflect the expected conclusions formed earlier, i.e. that as the electron (or hole) is forced up the E-k curve, the parabolic description of the band becomes more approximate. The barrier material, Ga 1 x AlxAs, becomes indirect as x increases beyond 0.42, thus producing an extra complication. Many real layered structures are grown with concentrations below this value, and therefore the majority of examples in this present book do conform to this criterion. Given this, the maximum effect of band nonparabolicity is largely given by the bottom curve of Fig. 3.28, i.e. 2 meV. The chapters that follow are centred around the development of techniques and methods and the illustration of generic physics which is applicable across material systems, so band non-parabolicity will not be employed in future examples of calculations based on the GaAs/Gai-xAlzAs material system.

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1. Design a Mamdani fuzzy controller to control a set of ten lifts for a building of forty storey to maximize utilization and minimize delays. 2. Design a Mamdani fuzzy controller for an automatic gearbox for motor vehicles. 3. Consider the following rule base: if x is Small then y is Big if x is Medium then y is Small if x is Big then y is Medium Given the membership functions illustrated in Figure 19.3, answer the following questions: using a Mamdani-type fuzzy controller, what are the firing strengths of each rule 4. Consider the following Takagi-Sugeno rules: if x is A1 and y is B1 then z\ = x + y + 1 if x is A2 and y is B\ then 22 = 2x + y + 1 if x is A1 and y is B2 then z3 = 2x + 3y if x is A2 and y is B2 then 24 = 2x + 5 Compute the value of z for x = 1, y = 4 and the antecedent fuzzy sets A1 = {1/0.1,2/0.6,3/1.0} A2 = {1/0.9,2/0.4,3/0.0} #1 = {4/1.0,5/1.0,6/0.3} B2 = {4/0.1,5/0.9,6/1.0}

(10.15)

Figure 3.29 The difference in ground-state energy of an electron in a single Ino.53Gao.47As/Ino.52Alo.4sAs quantum well, with and without non-parabolicity, AE = E1(with) - E1 (without)

{ O ^ m A even.ra A P } m := rot.m { m = M+2 } . We begin by calculating P. Applying the assignment axiom, we have { rot.m = M-^2 } m := rot.m { m = M-=-2 } . So, P must satisfy, for all m and M, 0 < m A even.ra A P => rot.m = M+ 2 . Comparing this with the property (10.13) of rot, it is clear that P = m^2-M-2 will do. (In more detail, it is a consequence of (10.13) that

One material in which this effect is thought to be more important is the quaternary In 1 _ x _ y Al x Ga y As system, which has become an important material system for intersubband lasers (more of this later in 9) because of its large conduction band offset. In particular, the Ino.52 Alo.48 As and Ino.53Gao.47As alloys are lattice-matched to the readily available InP substrates (see [15] p. 196).

21

(10.16)

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